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Composition controllability of InGaAs nanowire arrays in selective area growth with controlled pitches on Si platform

机译：在si平台上具有受控节距的选择性区域生长中的InGaas纳米线阵列的成分可控性

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Kohei Chiba; Katsuhiro Tomioka; Akinobu Yoshida; Junichi Motohisa;
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1. Composition controllability of InGaAs nanowire arrays in selective area growth with controlled pitches on Si platform [J] . Kohei Chiba, Katsuhiro Tomioka, Akinobu Yoshida, AIP Advances . 2017,第12期

机译：INGAAS纳米线阵列在SI平台上控制间距的选择性区域生长中的组成可控性
2. Growth kinetics in position-controlled and catalyst-free InAs nanowire arrays on Si(111) grown by selective area molecular beam epitaxy [J] . S. Hertenberger, D. Rudolph, M. Bichler, Journal of Applied Physics . 2010,第11期

机译：通过选择性区域分子束外延生长在Si（111）上位置控制且无催化剂的InAs纳米线阵列中的生长动力学
3. Polarity-Controlled GaN/AlN Nucleation Layers for Selective-Area Growth of GaN Nanowire Arrays on Si(111) Substrates by Molecular Beam Epitaxy [J] . Brubaker Matt D., Duff Shannon M., Harvey Todd E., SIAM journal on applied dynamical systems . 2017,第2期

机译：通过分子束外延对GaN纳米线阵列的GaN纳米线阵列的选择性区域生长的极性控制的GaN / AlN成核层
4. Fabrication of InGaAs quantum wires with composition-controlled barrier layers by selective growth of molecular beam epitaxy [C] . Sugaya, T., Nakagawa, Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on . 1996

机译：通过选择性生长分子束外延制备具有成分控制的势垒层的InGaAs量子线
5. Design and fabrication of compositionally- and shape-controlled metal nanoparticles for semiconductor nanowire growth. [D] . Lin, Pin Ann. 2012

机译：用于半导体纳米线生长的成分控制和形状控制的金属纳米粒子的设计和制造。
6. Site-Selective Controlled Dealloying Process of Gold-Silver Nanowire Array: a Simple Approach towards Long-Term Stability and Sensitivity Improvement of SERS Substrate [O] . Natta Wiriyakun, Karuna Pankhlueab, Suwimon Boonrungsiman, -1

机译：银-银纳米线阵列的站点选择控制的脱合金工艺：SERS基板长期稳定性和灵敏度提高的简单方法
7. Site-Selective Controlled Dealloying Process of Gold-Silver Nanowire Array: a Simple Approach towards Long-Term Stability and Sensitivity Improvement of SERS Substrate [O] . Natta Wiriyakun, Karuna Pankhlueab, Suwimon Boonrungsiman, 2016

机译：金银纳米线阵列的场地选择性控制探索工艺：SERS衬底的长期稳定性和敏感性改进的简单方法

Composition controllability of InGaAs nanowire arrays in selective area growth with controlled pitches on Si platform

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